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商品の詳細:
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| 材料: | Nd:YVO4 | 添加物集中: | 0.1 – 3at% |
|---|---|---|---|
| オリエンテーション: | カットかCカット | 次元の許容: | Wの（+/-0.1） ×Hの（+/-0.1） ×L （+/-0.5） mm |
| 波頭のゆがみ: | <> | 小さな溝: | <0> |
| スクラッチ/ディグ: | 10-5@MIL-0-13830A | 平行: | <20 arc="" seconds=""> |
| 損傷閾値: | 1GW/cm2@1064nm 10ns 10HZ | 増透膜: | R<0.2%@1064nm |
| ハイライト: | ネオジム添加されたイットリウムのorthovanadate,Nd YVO4活動的なレーザー媒体,Nd YVO4の結晶材料 |
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Nd:YVO4
Nd:YVO4 is the most efficient laser host crystal for diode pumping among the current commercial laser crystals, especially, for low to middle power density. This is mainly for its absorption and emission features surpassing Nd:YAG. Pumped by laser diodes, Nd:YVO4 crystal has been incorporated with high NLO coefficient crystals ( LBO, BBO, or KTP) to frequency-shift the output from the near infrared to green, blue, or even UV. This incorporation to construct all solid state lasers is an ideal laser tool that can cover the most widespread applications of lasers, including machining, material processing, spectroscopy, wafer inspection, light displays, medical diagnostics, laser printing, and data storage, etc. It has been shown that Nd:YVO4 based diode pumped solid state lasers are rapidly occupying the markets traditionally dominated by water-cooled ion lasers and lamp-pumped lasers, especially when compact design and single-longitudinal-mode outputs are required.
Nd:YVO4's advantages over Nd:YAG:
• As high as about five times larger absorption efficient over a wide pumping bandwidth around 808 nm ( therefore, the dependency on pumping wavelength is much lower and a strong tendency to the single mode output);
• As large as three times larger stimulated emission cross-section at the lasing wavelength of 1064nm;
• Lower lasing threshold and higher slope efficiency;
• As a uniaxial crystal with a large birefringence, the emission is only a linearly polarized.
Specifications
| Material | Nd:YVO4 |
| Dopant Concentration | 0.1 – 3at% |
| Orientation | A-cut or C-cut |
| Dimension tolerance | W(+/-0.1)×H(+/-0.1)×L(+/-0.5)mm |
| wavefront distortion | <λ/8 @633nm |
| Chamfer | <0.15×45° |
| Clear Aperture | >90% |
| Flatness | λ/10@ 633 nm |
| Chips | <0.1mm |
| Scratch/Dig | 10-5@MIL-0-13830A |
| Perpendicularity | ≤5 arc minutes |
| Parallelism | <20 arc seconds |
| Damage threshold | 1GW/cm2@1064nm 10ns 10HZ |
| Anti-Reflection coating | R<0.2%@1064nm |
Properties
| Crystal structure | Tetragonal System |
| Point Group | D4h |
| Density | 4.22 g/cm2 |
| Mohs Hardness | 4-5 |
| Thermal Expansion Coefficient | αa=4.43×10-6/K αc=11.37×10-6/K |
| Thermal Conductivity Coefficient | ⊥C: 51mw/cm.k //C: 52.3 mw /cm.k(300k) |
| Laser Wavelength | 1064nm, 1342nm |
| Pump wavelength | 808nm |
| Stimulated emission cross-section | 25×10-19cm2 @ 1064nm |
| Fluorescent lifetime | 90μs(1% Nd doping) |
| Absorption coefficient | 31.4cm-1 @810nm |
| Intrinsic loss | 0.02cm-1 @1064nm |
| Gain bandwidth | 0.96nm@1064nm |
| Polarized laser emission | p polarization; parallel to optic axis(c-axis) |
コンタクトパーソン: JACK HAN
電話番号: 86-18655618388
